Invited Speakers

Boston University, USA

Theoretical Models of Ultra-Wide Band Gap Semiconductor Materials and Devices

Charles University, Czech Republic

Study of vacancies in GaN crystals and thin films by positron annihilation spectroscopy

Nagoya University, Japan

Selective p-type doping for vertical GaN power devices

Durham, NC

Key electrical aspects of N and Al doped 4H-SiC: measurements and modelling

Complutense University of Madrid, Spain

New trends on wide bandgap oxides for photonic applications

HRL Laboratories, USA

Millimeter-wave GaN Opportunities and Challenges

Hungarian Academy of Sciences, Hungary

Advanced TEM characterization of compound semiconductors and 2D materials

(NTNU) Norwegian University of Science and Technology, Trondheim, Norway.

SiC MOSFETs enabling high-performance inverter designs.

Hellenic Mediterranean University (HMU)

"Perovskites meet 2D materials: A novel materials platform for efficient energy harvesting and neuromorphics"

Executive Director & CTO at PowerAmerica, Professor in Electrical Engineering at North Carolina State University

Accelerating WBG Power Semiconductor Technology Commercialization

Cornell University, USA

HEMTs based on GaN/AlN heterostructures

Airbus: Central Research and Technology, Taufkirchen, Germany

For the skies: Exploring tomorrow's microwave technologies